The effect of Zn1−xSnxOybuffer layer thickness in 18.0% efficient Cd-free Cu(In,Ga)Se2solar cells-Reference-Cited by-同舟云学术

The effect of Zn1−xSnxOybuffer layer thickness in 18.0% efficient Cd-free Cu(In,Ga)Se2solar cells

Published:2012-07-10 Issue:8 Volume:21 Page:1588-1597
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Lindahl J.¹,Wätjen J. T.¹,Hultqvist A.¹,Ericson T.¹,Edoff M.¹,Törndahl T.¹

Affiliation:

1. Ångström Solar Center, Solid State Electronics; Uppsala University; P.O. Box 534 SE-751 21 Uppsala Sweden

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pip.2239/fullpdf

Reference36 articles.

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4. Buffer layers and transparent conducting oxides for chalcopyrite Cu(In,Ga)(S,Se)2 based thin film photovoltaics: present status and current developments;Naghavi;Progress in Photovoltaics: Research and Applications,2010

5. Buffer layers in Cu(In,Ga)Se2 solar cells and modules;Hariskos;Thin Solid Films,2005

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