Computational study of graphene-gated graphene-Si thin film Schottky junction field-effect solar cell by finite difference method-Reference-Cited by-同舟云学术

Computational study of graphene-gated graphene-Si thin film Schottky junction field-effect solar cell by finite difference method

Published:2018-03-15 Issue:5 Volume:31 Page:e2337
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numer Model

Author:

Xie Hao¹²^ORCID,Wang Manxi¹,Yang Xiaofan¹,Zeng Yonghu¹

Affiliation:

1. State Key Lab of Complex Electromagnetic Environment Effects on Electronic and Information System (CEMEE); Luoyang 470073 China

2. Innovative Institute of Electromagnetic Information and Electronic Integration, College of Information Science and Electronic Engineering; Zhejiang University; Hangzhou 310058 China

Funder

State Key Lab of Complex Electromagnetic Environment Effects on Electronic and Information System (CEMEE)

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jnm.2337/fullpdf

Reference52 articles.

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