A novel large‐signal FET model considering trapping‐induced dispersions-Reference-Cited by-同舟云学术

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A novel large‐signal FET model considering trapping‐induced dispersions

Published:2019-01-30 Issue:3 Volume:32 Page:e2552
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numer Model

Author:

Yuan Ye¹²^ORCID,Zhong Zheng²,Guo Yong‐xin³,Mu Shanxiang¹

Affiliation:

1. School of Electronic and Optical EngineeringNanjing University of Science and Technology Nanjing China

2. Centre of Advanced Microelectronic DevicesNational University of Singapore (Suzhou) Research Institute Suzhou China

3. Department of Electrical and Computer EngineeringNational University of Singapore Singapore

Funder

Suzhou Science and Technology Council, China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.2552

Reference13 articles.

1. A 3-D Table-Based Method for Non-Quasi-Static Microwave FET Devices Modeling

2. RootD. E. FanS.andMeyerJ. “Technology independent large signal non‐quasi‐static FET models by direct construction from automatically characterized device data ” 1991 21st European microwave conference Stuttgart Germany 1991 pp. 927‐932.

3. An accurate large-signal model of GaAs MESFET which accounts for charge conservation, dispersion, and self-heating

4. Nonlinear Transistor Model Parameter Extraction Techniques

5. XuJ.J. JonesR. HarrisS.A. NielsenT. RootD.E. “Dynamic FET model ‐ DynaFET ‐ for GaN transistors from NVNA active source injection measurements” IEEE MTT‐S International Microwave Symp 2014.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2020-01-07

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