Affiliation:
1. Dept. of Electrical Engineering Columbia University New York, NY USA 10027
Abstract
We present a method of monolithically integrating GaN microLEDs with an IGZO TFT backplane to produce an activematrix microdisplay. After discussion of the fabrication process, individual LEDs, TFTs, and the integrated system are characterized. Results demonstrate a 32x32 pixel, 78.4 PPI microdisplay with luminance exceeding 1500 nits. This type of monolithic microdisplay forges the path forward for future high luminance integrated displays to enable augmented and mixed reality applications.