Affiliation:
1. Department of Electrical Engineering ANITS Visakhapatnam India
2. Department of Electrical Engineering National Institute of Technology Raipur Raipur India
3. Department of Electrical Engineering GVP College of Engineering for Women Visakhapatnam India
Abstract
SummaryRecent research has focused on high‐power two‐stage photovoltaic (PV) systems, particularly with the introduction of wideband gap silicon carbide (SiC) devices. A massive inductor or interleaved boost converter is utilized in a standard two‐stage system, requiring a significantly larger number of components and subsequently impacting power density. As a result, the purpose of this research is to provide a topology for a high‐power non‐isolated switched capacitor network‐integrated boost converter (SCNIBC). This architecture employs two of every switch/diode/inductor and capacitor. The suggested architecture has a triple voltage boost at 50% duty ratio, excellent efficiency, and very low inrush current. A suitable analysis is performed to determine the voltage gain, component selection, and power loss analysis. Reliability analysis is studied as per the IEC 61709‐2017 standards. A fair comparison with existing state‐of‐the‐art high‐power PV system topologies is offered. Eventually, the steady‐state experimental findings for a 2.5 kW load are confirmed. The results are also validated for a step adjustment in input voltage from 80 V to 96 V. Lastly, the grid connected operation of converter is studied with a H‐bridge inverter under unity, lagging and leading power factors.
Funder
Unitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii
Subject
Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials