Accelerated irradiance and temperature cycle test for amorphous silicon photovoltaic devices

Author:

Igari Sanekazu1,Takahisa Kiyoshi1

Affiliation:

1. National Institute of Advanced Industrial Science and Technology; Central 2, 1-1-1, Umezono Tsukuba Ibaraki 305-8568 Japan

Funder

New Energy and Industrial Technology Development Organization

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Yang J Banerjee A Lord K Guha S Correlation of component cells with high efficiency amorphous silicon alloy triple-junction solar cells and modules IEEE 2nd World Conference on Photovoltaic Energy Conversion 1998 387 390

2. Analysis of light-induced degradation in amorphous silicon alloy solar cells and its application to accelerated test method;Nakata;Japanese Journal of Applied Physics,1992

3. Light-induced recovery of a-Si solar cells;Fujikake;Solar Energy Materials and Solar Cells,1994

4. Gottschalg R Jardine CN Rüther R Betts TR Conibeer GJ Close J Infield DG Kearney MJ Lam KH Lane K Pang H Tscharner R Performance of amorphous silicon double junction photovoltaic systems in different climatic zones Proceedings of the 29th IEEE Photovoltaic Specialists Conference 2002 1699 1702

5. Rüther R Dacoregio MM Montenegro AA Knob P The performance of a fully-monitored, double-junction a-si grid-connected BIPV system after four years of continuous operation in Brazil Proceedings of the 29th IEEE Photovoltaic Specialists Conference 2002 1695 1698

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