62‐1: <i>Distinguished Student Paper:</i> Ultraviolet Photodetectors and Readout Based on a‐IGZO Semiconductor Technology-Reference-Cited by-同舟云学术

62‐1: Distinguished Student Paper: Ultraviolet Photodetectors and Readout Based on a‐IGZO Semiconductor Technology

Published:2023-06 Issue:1 Volume:54 Page:880-883
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Schellander Yannick¹²,Winter Marius¹,Schamber Maurice³,Munkes Fabian³,Schalberger Patrick¹²,Kuebler Harald³²,Pfau Tilman³²,Fruehauf Norbert¹²

Affiliation:

1. Institute for Large Area Microelectronics University of Stuttgart

2. Research Center SCoPE University of Stuttgart

3. Institute of Physics University of Stuttgart

Abstract

In this work real‐time ultraviolet photodetectors are realized through metal‐semiconductor‐metal (MSM) structures. Amorphous indium gallium zinc oxide (a‐IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an allenhancement a‐IGZO thin film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R, a low response time tRES and a good noise equivalent power value NEP.

Publisher

Wiley

Subject

General Medicine

Reference13 articles.

1. Improved Detectivity of Flexible a-InGaZnO UV Photodetector via Surface Fluorine Plasma Treatment

2. New concept ultraviolet photodetectors

3. Photo-Induced Room-Temperature Gas Sensing with a-IGZO Based Thin-Film Transistors Fabricated on Flexible Plastic Foil

4. Realization of fast-response flexible ultraviolet photodetector employing a metal-semiconductor-metal structure InGaZnO photodiode;Zhou H.T.;PSC Adv.,2015