Performance Comparison of InGaAsP Lasers Emitting at 1.3 and 1.55 μm for Lightwave System Applications-Reference-Cited by-同舟云学术

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Performance Comparison of InGaAsP Lasers Emitting at 1.3 and 1.55 μm for Lightwave System Applications

Published:1985-10 Issue:8 Volume:64 Page:1857-1884
ISSN:8756-2324
Container-title:AT&T Technical Journal
language:en
Short-container-title:

Author:

Dutta N. K.,Wilson R. B.,Wilt D. P.,Besomi P.,Brown R. L.,Nelson R. J.,Dixon R. W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temparature drift of modulation characteristics in semiconductor lasers;IEE Proceedings J Optoelectronics;1993

2. Defect mechanisms in degradation of 1.3-μm wavelength channeled-substrate buried heterostructure lasers;Journal of Applied Physics;1988-02

3. Mode-Controlled Semiconductor Lasers;Springer Series in Electronics and Photonics;1988

4. Effect of active layer thickness on differential quantum efficiency of 1.3 and 1.55 μm InGaAsP injection lasers;Applied Physics Letters;1987-07-06

5. Determination of carrier density dependent lifetime and quantum efficiency in semiconductors with a photoluminescence method (application to InGaAsP/InP heterostructures);Applied Physics A Solids and Surfaces;1987-01

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