1. GuenoleJan LucThomas SonLe Yuan‐JenLee HuanlongLiu JianZhu JodiIwata‐Harms SahilPatel Ru‐YingTong VigneshSundar SantiagoSerrano‐Guisan DongnaShen RenrenHe JesminHaq Zhongjian JeffreyTeng VinhLam YiYang Yu‐JenWang TomZhong HideakiFukuzawa andPo‐KangWang(2018).Demonstration of Ultra‐Low Voltage and Ultra Low Power STT‐MRAM designed for compatibility with 0x node embedded LLC applications.Symposium on VLSI Technology Digest of Technical Papers. VLSI. p.65.
2. Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)