Phosphorescence Properties of Boron/Bismuth Hybrid Conjugated Materials

Author:

Adachi Yohei1ORCID,Terao Shota1,Kanematsu Yusuke1ORCID,Ohshita Joji12ORCID

Affiliation:

1. Smart Innovation Program Graduate School of Advanced Science and Engineering Hiroshima University Higashihiroshima, Higashi-Hiroshima 739-8527 Japan

2. Division of Materials Model-Based Research Digital Monozukuri (Manufacturing) Education and Research Center Hiroshima University Higashi-Hiroshima, Hiroshima 739-8527 Japan

Abstract

AbstractBy introducing main–group elements such as boron and bismuth to π‐conjugated systems, it is possible to modify the optical properties of π‐conjugated materials through orbital interactions between the orbital on the elements and π/π*‐orbitals, and the heavy atom effect. Moreover, bismuth, which is the heaviest stable element, induces a significant heavy atom effect, making organobismuth compounds promising for applications as phosphorescent materials. In this study, we synthesized new room–temperature phosphorescent materials by incorporating bismuth into thiophene units. The phosphorescence properties of these materials, such as emission lifetime and wavelength, could be further controlled by combining tricoordinate boron with the thienylbismuth structures. The synthesized bismuth‐ and boron–containing thiophene compounds exhibited phosphorescence at room temperature in both solution and solid states. Furthermore, the introduction of boron raised the energy of the triplet state in the π‐conjugated system, resulting in a blue shift of the phosphorescence wavelength. The analysis of photoluminescence properties and TD‐DFT calculations revealed that the introduction of bismuth enhances phosphorescence properties, whereas the introduction of boron further promotes intersystem crossing.

Publisher

Wiley

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