Alignment of Semiconductor Nanowires Using Ion Beams-Reference-Cited by-同舟云学术

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Alignment of Semiconductor Nanowires Using Ion Beams

Published:2009-11-16 Issue:22 Volume:5 Page:2576-2580
ISSN:1613-6810
Container-title:Small
language:en
Short-container-title:Small

Author:

Borschel Christian,Niepelt Raphael,Geburt Sebastian,Gutsche Christoph,Regolin Ingo,Prost Werner,Tegude Franz-Josef,Stichtenoth Daniel,Schwen Daniel,Ronning Carsten

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference27 articles.

1. One-Dimensional Nanostructures: Synthesis, Characterization, and Applications

2. Growth of nanowires

3. Functional Nanowires

4. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

5. High-performance ZnO nanowire field effect transistors

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1. Focused-ion-beam-introduced stress as a driving force for three-dimensional micro/nano-assembly;Sensors and Actuators A: Physical;2023-02

2. Simulation Study on the Defect Generation, Accumulation Mechanism and Mechanical Response of GaAs Nanowires under Heavy-Ion Irradiation;Nanomaterials;2022-02-11

3. Ion beam-induced bending of TiO₂ nanowires with bead-like and prismatic shapes;RSC Advances;2022

4. 2-Keto-L-Gulonic Acid Improved the Salt Stress Resistance of Non-heading Chinese Cabbage by Increasing L-Ascorbic Acid Accumulation;Frontiers in Plant Science;2021-11-04

5. Ion-Induced Bending with Applications for High-Resolution Electron Imaging of Nanometer-Sized Samples;ACS Applied Nano Materials;2021-11-02

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