Hybrid Permeable-Base Transistors Based on an Indenofluorene Derivative-Reference-Cited by-同舟云学术

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Hybrid Permeable-Base Transistors Based on an Indenofluorene Derivative

Published:2006-03 Issue:3 Volume:2 Page:372-374
ISSN:1613-6810
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language:en
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Author:

Serbena José P. M.,Hümmelgen Ivo A.,Hadizad Tayebeh,Wang Zhi Yuan

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference11 articles.

1. U. S. Patent 1 877 140, 1932.

2. Complete Guide to Semiconductor Devices, Wiley, New York, 2002.

3. High-Speed Semiconductor Devices, Wiley, New York, 1990.

4. M. S. Meruvia, Ph.D. Thesis, Universidade Federal do Paraná, Curitiba (Brazil), 2004.

5. Organic-metal-semiconductor transistor with high gain

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