Highly Sensitive, Ultrafast, and Broadband Photo‐Detecting Field‐Effect Transistor with Transition‐Metal Dichalcogenide van der Waals Heterostructures of MoTe 2 and PdSe 2-Reference-Cited by-同舟云学术

Highly Sensitive, Ultrafast, and Broadband Photo‐Detecting Field‐Effect Transistor with Transition‐Metal Dichalcogenide van der Waals Heterostructures of MoTe 2 and PdSe 2

Published:2021-03-16 Issue:11 Volume:8 Page:2003713
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Adv. Sci.

Author:

Afzal Amir Muhammad¹,Iqbal Muhammad Zahir²,Dastgeer Ghulam³⁴,Ahmad Aqrab ul⁵,Park Byoungchoo¹^ORCID

Affiliation:

1. Department of Electrical and Biological Physics Kwangwoon University Wolgye‐Dong Seoul 01897 South Korea

2. Nanotechnology Research Laboratory, Faculty of Engineering Sciences GIK Institute of Engineering Sciences and Technology Topi Khyber Pakhtunkhwa 23640 Pakistan

3. School of Physics Peking University Beijing 100871 China

4. IBS Center for Integrated Nanostructure Physics Sungkyunkwan University Suwon 16419 South Korea

5. School of Physics and School of Microelectronics Dalian University of Technology Dalian 116000 China

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202003713

Reference87 articles.

1. A Noble Metal Dichalcogenide for High‐Performance Field‐Effect Transistors and Broadband Photodetectors

2. Mixed-dimensional PdSe2/SiNWA heterostructure based photovoltaic detectors for self-driven, broadband photodetection, infrared imaging and humidity sensing

3. Visible-light photocatalysis enhanced room-temperature formaldehyde gas sensing by MoS2/rGO hybrids

4. Graphene-based wearable temperature sensor and infrared photodetector on a flexible polyimide substrate

5. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

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