Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure-Reference-Cited by-同舟云学术

Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure

Published:2020-08-05 Issue:19 Volume:7 Page:2000991
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Adv. Sci.

Author:

Jung Kil‐Su¹²,Heo Keun³,Kim Min‐Je⁴,Andreev Maksim³,Seo Seunghwan³,Kim Jin‐Ok³,Lim Ji‐Hye³,Kim Kwan‐Ho³,Kim Sungho⁵,Kim Ki Seok⁶⁷,Yeom Geun Yong⁷,Cho Jeong Ho⁸,Park Jin‐Hong¹³^ORCID

Affiliation:

1. Department of Semiconductor and Display Engineering Sungkyunkwan University Suwon 440‐746 South Korea

2. Memory Technology Design Team Samsung Electronics Co. Hwasung 18448 South Korea

3. Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 440‐746 South Korea

4. SKKU Advanced Institute of Nano Technology (SAINT) Sungkyunkwan University Suwon 440‐746 South Korea

5. Jet Propulsion Laboratory (JPL) California Institute of Technology Pasadena CA 91109 USA

6. Research Laboratory of Electronics Massachusetts Institute of Technology (MIT) Cambridge MA 02139‐4307 USA

7. School of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 440‐746 South Korea

8. Department of Chemical and Biomolecular Engineering Yonsei University Seoul 120‐749 South Korea

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Ministry of Trade, Industry and Energy

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202000991

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4. Relationship between Nitrogen Profile and Reliability of Heavily Oxynitrided Tunnel Oxide Films for Flash Electrically Erasable and Programmable ROMs

5. Resonant tunneling in semiconductor double barriers

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