High Velocity, Low‐Voltage Collective In‐Plane Switching in (100) BaTiO <sub>3</sub> Thin Films-Reference-Cited by-同舟云学术

High Velocity, Low‐Voltage Collective In‐Plane Switching in (100) BaTiO ₃ Thin Films

Published:2022-08-28 Issue:29 Volume:9 Page:2201530
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Advanced Science

Author:

Ræder Trygve M.¹²,Qin Shuyu³,Zachman Michael J.⁴,Vasudevan Rama K.⁴,Grande Tor²,Agar Joshua C.⁵⁶

Affiliation:

1. Department of Physics DTU Danmarks Tekniske Universitet Kgs. Lyngby 2800 Denmark

2. Department of Materials Science and Engineering NTNU Norwegian University of Science and Technology Trondheim NO‐7491 Norway

3. Department of Computer Science and Engineering Lehigh University Bethlehem PA 18015 USA

4. The Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA

5. Department of Materials Science and Engineering Lehigh University Bethlehem PA 18015 USA

6. Department of Mechanical Engineering and Mechanics Drexel University Philadelphia PA 19104 USA

Funder

Directorate for Mathematical and Physical Sciences

Office of Science

Norges Forskningsråd

U.S. Department of Energy

Army Research Office

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202201530

Reference36 articles.

1. Resonant domain-wall-enhanced tunable microwave ferroelectrics

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4. Room-Temperature Negative Capacitance in a Ferroelectric–Dielectric Superlattice Heterostructure

5. Kinetic control of tunable multi-state switching in ferroelectric thin films

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