Gate‐Tunable Magnetism via Resonant Se‐Vacancy Levels in WSe 2-Reference-Cited by-同舟云学术

Gate‐Tunable Magnetism via Resonant Se‐Vacancy Levels in WSe 2

Published:2021-10-28 Issue:24 Volume:8 Page:2102911
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Advanced Science

Author:

Nguyen Tuan Dung¹²,Jiang Jinbao¹³,Song Bumsub¹²,Tran Minh Dao¹,Choi Wooseon²,Kim Ji Hee¹²,Kim Young‐Min¹²,Duong Dinh Loc¹²,Lee Young Hee¹²⁴^ORCID

Affiliation:

1. Center for Integrated Nanostructure Physics (CINAP) Institute for Basic Science (IBS) Suwon 16419 Republic of Korea

2. Department of Energy Science Sungkyunkwan University Suwon 16419 Republic of Korea

3. School of Microelectronics Science and Technology Sun Yat‐sen University Zhuhai 519082 China

4. Department of Physics Sungkyunkwan University Suwon 16419 Republic of Korea

Funder

Institute for Basic Science

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202102911

Reference40 articles.

1. Optically active quantum dots in monolayer WSe2

2. Voltage-controlled quantum light from an atomically thin semiconductor

3. 2D materials for quantum information science

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