Symmetrically Ion‐Gated In‐Plane Metal‐Oxide Transistors for Highly Sensitive and Low‐Voltage Driven Bioelectronics-Reference-Cited by-同舟云学术

Symmetrically Ion‐Gated In‐Plane Metal‐Oxide Transistors for Highly Sensitive and Low‐Voltage Driven Bioelectronics

Published:2022-03-03 Issue:13 Volume:9 Page:2103275
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Advanced Science

Author:

Kang Jingu¹,Jang Young‐Woo¹,Moon Sang Hee¹,Kang Youngjin²,Kim Jaehyun³,Kim Yong‐Hoon²,Park Sung Kyu¹^ORCID

Affiliation:

1. School of Electrical and Electronics Engineering Chung‐Ang University Seoul 06974 Korea

2. School of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 Korea

3. Department of Chemistry and Materials Research Center Northwestern University 2145 Sheridan Road Evanston IL 60208 USA

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202103275

Reference36 articles.

1. A review on detection of heavy metal ions in water – An electrochemical approach

2. Electrochemical sensing of heavy metal ions with inorganic, organic and bio-materials

3. Wearable Chemical Sensors: Present Challenges and Future Prospects

4. Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species

5. Nanoionics: ion transport and electrochemical storage in confined systems

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