Multiple Electronic Phases Coexisting under Inhomogeneous Strains in the Correlated Insulator
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Published:2023-04-25
Issue:19
Volume:10
Page:
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ISSN:2198-3844
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Container-title:Advanced Science
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language:en
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Short-container-title:Advanced Science
Author:
Hou Baofei1,
Zhang Yu12ORCID,
Zhang Teng1,
Wu Jizheng34,
Zhang Quanzhen1,
Han Xu1,
Huang Zeping1,
Chen Yaoyao1,
Ji Hongyan1,
Wang Tingting1,
Liu Liwei1,
Si Chen34,
Gao Hong‐Jun5,
Wang Yeliang1ORCID
Affiliation:
1. School of Integrated Circuits and Electronics MIIT Key Laboratory for Low‐Dimensional Quantum Structure and Devices Beijing Institute of Technology Beijing 100081 China
2. Advanced Research Institute of Multidisciplinary Sciences Beijing Institute of Technology Beijing 100081 China
3. School of Materials Science and Engineering Beihang University Beijing 100191 China
4. Center for Integrated Computational Materials Engineering International Research Institute for Multidisciplinary Science Beihang University Beijing 100191 China
5. Institute of Physics Chinese Academy of Sciences Beijing 100190 China
Abstract
AbstractMonolayer transition metal dichalcogenides (TMDs) can host exotic phenomena such as correlated insulating and charge‐density‐wave (CDW) phases. Such properties are strongly dependent on the precise atomic arrangements. Strain, as an effective tuning parameter in atomic arrangements, has been widely used for tailoring material's structures and related properties, yet to date, a convincing demonstration of strain‐induced dedicate phase transition at nanometer scale in monolayer TMDs has been lacking. Here, a strain engineering technique is developed to controllably introduce out‐of‐plane atomic deformations in monolayer CDW material 1T‐NbSe2. The scanning tunneling microscopy and spectroscopy (STM and STS) measurements, accompanied by first‐principles calculations, demonstrate that the CDW phase of 1T‐NbSe2 can survive under both tensile and compressive strains even up to 5%. Moreover, significant strain‐induced phase transitions are observed, i.e., tensile (compressive) strains can drive 1T‐NbSe2 from an intrinsic‐correlated insulator into a band insulator (metal). Furthermore, experimental evidence of the multiple electronic phase coexistence at the nanoscale is provided. The results shed new lights on the strain engineering of correlated insulator and useful for design and development of strain‐related nanodevices.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Natural Science Foundation of Beijing Municipality
China Postdoctoral Science Foundation
Subject
General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)
Cited by
1 articles.
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