An Amorphous Native Oxide Shell for High Bias‐Stress Stability Nanowire Synaptic Transistor
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Published:2023-09-28
Issue:31
Volume:10
Page:
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ISSN:2198-3844
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Container-title:Advanced Science
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language:en
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Short-container-title:Advanced Science
Author:
Zhuang Xinming12,
Sa Zixu1,
Zhang Jie1,
Wang Mingxu1,
Xu Mingsheng1,
Liu Fengjing1,
Song Kepeng3,
He Tao1,
Chen Feng1,
Yang Zai‐xing1ORCID
Affiliation:
1. School of Physics State Key Laboratory of Crystal Materials Shandong University Jinan 250100 P. R. China
2. School of Microelectronics Shandong University Jinan 250100 P. R. China
3. School of Chemistry and Chemical Engineering Shandong University Jinan 250100 P. R. China
Abstract
AbstractThe inhomogeneous native oxide shells on the surfaces of III–V group semiconductors typically yield inferior and unstable electrical properties metrics, challenging the development of next‐generation integrated circuits. Herein, the native GaOx shells are profitably utilized by a simple in‐situ thermal annealing process to achieve high‐performance GaSb nanowires (NWs) field‐effect‐transistors (FETs) with excellent bias‐stress stability and synaptic behaviors. By an optimal annealing time of 5 min, the as‐constructed GaSb NW FET demonstrates excellent stability with a minimal shift of transfer curve (ΔVth ≈ 0.54 V) under a 60 min gate bias, which is far more stable than that of pristine GaSb NW FET (ΔVth ≈ 8.2 V). When the high bias‐stress stability NW FET is used as the chargeable‐dielectric free synaptic transistor, the typical synaptic behaviors, such as short‐term plasticity, long‐term plasticity, spike‐time‐dependent plasticity, and reliable learning stability are demonstrated successfully through the voltage tests. The mobile oxygen ion in the native GaOx shell strongly offsets the trapping states and leads to enhanced bias‐stress stability and charge retention capability for synaptic behaviors. This work provides a new way of utilizing the native oxide shell to realize stable FET for chargeable‐dielectric free neuromorphic computing systems.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Natural Science Foundation of Shandong Province
China Postdoctoral Science Foundation
Taishan Scholar Foundation of Shandong Province
Subject
General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)