Near‐Field Photodetection in Direction Tunable Surface Plasmon Polaritons Waveguides Embedded with Graphene

Author:

Wu Chia‐Hung1ORCID,Ku Chih‐Jen2,Yu Min‐Wen1ORCID,Yang Jhen‐Hong1ORCID,Wu Pei‐Yuan3,Huang Chen‐Bin3,Lu Tien‐Chang4ORCID,Huang Jer‐Shing5678ORCID,Ishii Satoshi9,Chen Kuo‐Ping23

Affiliation:

1. College of Photonics National Yang Ming Chiao Tung University 301 Gaofa 3rd Road Tainan 71150 Taiwan

2. Institute of Imaging and Biomedical Photonics College of Photonics National Yang Ming Chiao Tung University 301 Gaofa 3rd Road Tainan 71150 Taiwan

3. Institute of Photonics Technologies National Tsing Hua University Hsinchu 300 Taiwan

4. Department of Photonics College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu 30010 Taiwan

5. Leibniz Institute of Photonic Technology Albert‐Einstein Straße 9 07745 Jena Germany

6. Institute of Physical Chemistry and Abbe Center of Photonics Friedrich‐Schiller‐Universität Jena Helmholtzweg 4 D‐07743 Jena Germany

7. Research Center for Applied Sciences Academia Sinica 128 Academia Road, Sec. 2, Nankang District Taipei 11529 Taiwan

8. Department of Electrophysics National Yang Ming Chiao Tung University No. 1001 Daxue Rd, East District Hsinchu 30010 Taiwan

9. Research Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba Ibaraki 305‐0044 Japan

Abstract

Abstract2D materials have manifested themselves as key components toward compact integrated circuits. Because of their capability to circumvent the diffraction limit, light manipulation using surface plasmon polaritons (SPPs) is highly‐valued. In this study, plasmonic photodetection using graphene as a 2D material is investigated. Non‐scattering near‐field detection of SPPs is implemented via monolayer graphene stacked under an SPP waveguide with a symmetric antenna. Energy conversion between radiation power and electrical signals is utilized for the photovoltaic and photoconductive processes of the gold‐graphene interface and biased electrodes, measuring a maximum photoresponsivity of 29.2 mA W−1. The generated photocurrent is altered under the polarization state of the input light, producing a 400% contrast between the maximum and minimum signals. This result is universally applicable to all on‐chip optoelectronic circuits.

Funder

National Science and Technology Council

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

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