Greater than 10 cm 2 V −1 s −1 : A breakthrough of organic semiconductors for field‐effect transistors-Reference-Cited by-同舟云学术

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Greater than 10 cm 2 V −1 s −1 : A breakthrough of organic semiconductors for field‐effect transistors

Published:2021-05-03 Issue:6 Volume:3 Page:613-630
ISSN:2567-3165
Container-title:InfoMat
language:en
Short-container-title:InfoMat

Author:

Hu Peng¹,He Xuexia²,Jiang Hui³^ORCID

Affiliation:

1. School of Physics Northwest University Xi'an People's Republic of China

2. School of Materials Science and Engineering Shaanxi Normal University Xi'an People's Republic of China

3. School of Materials Science and Engineering Tianjin University Tianjin People's Republic of China

Funder

National Natural Science Foundation of China

Tianjin University

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/inf2.12188

Reference129 articles.

1. The Emergence of Organic Single‐Crystal Electronics

2. High Mobility of Dithiophene-Tetrathiafulvalene Single-Crystal Organic Field Effect Transistors

3. High-Resolution Inkjet Printing of All-Polymer Transistor Circuits

4. Recent Progress on Stretchable Electronic Devices with Intrinsically Stretchable Components

5. Materials and devices for transparent stretchable electronics

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