Triazidogallium and Derivatives: New Precursors to Thin Films and Nanoparticles of GaN-Reference-Cited by-同舟云学术

Triazidogallium and Derivatives: New Precursors to Thin Films and Nanoparticles of GaN

Published:1996-11 Issue:11 Volume:2 Page:1353-1358
ISSN:0947-6539
Container-title:Chemistry - A European Journal
language:de
Short-container-title:Chem. Eur. J.

Author:

Fischer Roland A.,Miehr Alexander,Herdtweck Eberhardt,Mattner Michael R.,Ambacher Oliver,Metzger Thomas,Born Eberhard,Weinkauf Sevil,Pulham Colin R.,Parsons Simon

Publisher

Wiley

Subject

General Chemistry,Catalysis,Organic Chemistry

Reference44 articles.

1. The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates

2. Growth of high optical and electrical quality GaN layers using low‐pressure metalorganic chemical vapor deposition

3. Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxy

4. GaN Growth Using GaN Buffer Layer

5. , , , , , J. Vac. Sci. Technol. B. 1996 submitted;

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