Suspended individual SWCNT characterization via bottom gate FET configuration-Reference-Cited by-同舟云学术

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Suspended individual SWCNT characterization via bottom gate FET configuration

Published:2017-07-27 Issue:10 Volume:59 Page:2610-2614
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Tuo Mingguang¹^ORCID,Wang Lu¹,Amer Moh R.²³,Yu Xiaoju¹,Cronin Stephen B.⁴,Xin Hao¹

Affiliation:

1. Department of Electrical and Computer Engineering; University of Arizona; Tucson Arizona 85721

2. Depertment of Electrical Engineering; University of California; Los Angeles, Los Angeles California 90095

3. Center of Excellence for Green Nanotechnologies, King Abdulaziz City for Science and Technology; Riyadh 11442 Saudi Arabia

4. Depertment of Electrical Engineering; University of Southern California; Los Angeles California 90089

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Helical microtubules of graphitic carbon;Iijima;Nature.,1991

2. Radio frequency transistors using aligned semiconducting carbon nanotubes with current-gain cutoff frequency and maximum oscillation frequency simultaneously greater than 70 GHz;Cao;ACS Nano.,2016

3. Fundamental transmitting properties of carbon nanotube antennas;Hanson;IEEE Trans Antennas Propag.,2005

4. Carbon nanotube antenna: Far-field, near-field and thermal-noise properties;Maksimenkoa;Phys E.,2008

5. Microwave (8-50 GHz) characterization of multiwalled carbon nanotube papers using rectangular waveguides;Wang;IEEE Trans Microw Theory Tech.,2008

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Effect of Low-Temperature Annealing on the Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors;Journal of Electronic Materials;2024-01-22

2. Small-signal parameters extraction and noise analysis of CNTFETs;Semiconductor Science and Technology;2020-03-19

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