Luminescence and Photoconductivity Caused by Antisite Defects in CdIn2S4 Single Crystals-Reference-Cited by-同舟云学术

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Luminescence and Photoconductivity Caused by Antisite Defects in CdIn2S4 Single Crystals

Published:1986-02 Issue:2 Volume:21 Page:259-263
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Georgobiani A. N.,Gruzintsev A. N.,Ratseev S. A.,Tezlevan V. E.,Tiginyanu I. M.,Ursaki V. V.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference12 articles.

1. Photoconductivity and trap distribution in CdIn2S4

2. Photoluminescence of CdIn2S4 and Mixed Crystals with In2S3 as Related to Their Structural Properties

3. Photoconductivity and non-equilibrium carrier recombination in CdIn2S4 single crystals

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quasi-Continuously Distributed Traps and Photoluminescence in ZnGa2Se4 Single Crystals;Physica Status Solidi (a);1989-07-16

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