Carrier Concentration Profile of GaN Layers bei Using Additional Dried NH3-Reference-Cited by-同舟云学术

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Carrier Concentration Profile of GaN Layers bei Using Additional Dried NH3

Published:1986-05 Issue:5 Volume:21 Page:K71-K73
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Franzheld R.,Sobotta H.,Seifert W.,Butter E.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference4 articles.

1. Infrared Lattice Vibrations and Free-Electron Dispersion in GaN

2. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN

3. On the origin of free carriers in high-conducting n-GaN

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Infrared lattice vibrations of GaN;physica status solidi (b);1992-12-01

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