Band tail conduction in Zn-doped GaAs
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference19 articles.
1. The incorporation and characterisation of acceptors in epitaxial GaAs
2. : Semiconductor Statistics, Oxford 1962
3. Impurity band structure in degenerate semiconductors for both dense donors and acceptors
4. Conductivity and hall effect of heavily doped semiconductors at low temperatures in a weak magnetic field
5. Hall mobility due to hopping-type conduction in disordered systems
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature-dependent internal photoemission probe for band parameters;Physical Review B;2012-11-26
2. Impurity perturbation to the host band structure and recoil of the impurity state;Physical Review B;2003-08-28
3. Electrophysical properties of epitaxial gallium arsenide doped with acceptor impurities;Russian Physics Journal;1995-02
4. Empirical relationship between hall mobility and hole concentration in heavily doped p-type GaAs;Crystal Research and Technology;1990-11
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