Pressure-Induced Phase Transformation in Chalcopyrite AgInSe2
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference15 articles.
1. High pressure clamp for electrical measurements up to 8 GPa and temperature down to 77 K
2. : Ternary Diamond-Like Semiconductors, New York 1969
3. Pressure‐induced compensation inn‐type AgInSe2
4. High pressure semiconductor to metal transition in CrS and CrSe
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-pressure x-ray diffraction study on the structure and phase transitions of the defect-stannite ZnGa2Se4 and defect-chalcopyrite CdGa2S4;Journal of Applied Physics;2008-09-15
2. Hydrothermal synthesis and characterization of AgInSe2 nanorods;Journal of Crystal Growth;2003-06
3. Photoconductive response of polycrystalline n-AglnSe2 thin films;Vacuum;1996-03
4. Pressure-induced phase transformation in LiInSe2;Crystal Research and Technology;1987-02
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