Characterization of plasma etching of molybdenum polycid conductor stacks in Cl2/CF4 and Cl2/CF4/O2-Reference-Cited by-同舟云学术

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Characterization of plasma etching of molybdenum polycid conductor stacks in Cl2/CF4 and Cl2/CF4/O2

Published:1988-05 Issue:5 Volume:23 Page:705-712
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Handke R.,Lippert G.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference7 articles.

1. : Solid State Technology, April (1985) 193

2. : Plasma Processing, Proceedings of the 4-th Symposium 1983, Vol. 82–100, p. 362–381

3. Sputtering of Mo-Si layers from composite targets

4. : J. Vac. Sci. and Techn. Apr.—Ju (1983) 629

5. Transition Metal Silicides

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of O 2 Feed Gas Impurity on Cl2 Based Plasma Etching of Polysilicon;Journal of The Electrochemical Society;1992-01-01

2. Anisotropic plasma etching of P-doped poly-Si with CCl4/He;Crystal Research and Technology;1988-09

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