Melt Growth of CdTe Crystals and Transmission Electron Microscopic Investigations of their Grain Boundaries-Reference-Cited by-同舟云学术

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Melt Growth of CdTe Crystals and Transmission Electron Microscopic Investigations of their Grain Boundaries

Published:1991 Issue:8 Volume:26 Page:967-972
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Sabinina I. V.,Gutakovski A. K.,Milenov T. I.,Lyakh N. N.,Sidorov Y. O.,Gospodinov M. M.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference7 articles.

1. Evaluation of Defects in CdTe Using a Simple Cathodoluminescence Technique

2. Structural defects in CdTe crystals grown by two different vapour phase techniques

3. Defects in the sphalerite structure

4. Etch pits and polarity identification in CdTe, HgSe and HgTe crystals

5. Meeting device needs through melt growth of large-diameter elemental and compound semiconductors

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive Review on CdTe Crystals: Growth, Properties, and Photovoltaic Application;Physics of Metals and Metallography;2023-12

2. Defect Generation and Interaction during Crystal Growth;Handbook of Crystal Growth;2015

3. Dislocation cell structures in CdZnTe substrates and its behavior of threading into HgCdTe LPE epilayers;SPIE Proceedings;2011-06-09

4. Defects;CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications;2010

5. Defect Formation During Crystal Growth from the Melt;Springer Handbook of Crystal Growth;2010

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