Author:
Hegewald S.,Hein K.,Frank C.,John M.,Buhrig E.
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference12 articles.
1. : Laborbericht zum Abschlußbericht zur Forschungs- und Entwicklungsarbeit Reinststoffanalyse V, Vol. 1, Abschnitt II, p. 57
2. Zur frage des dampfdrucks der verbindungen InAs, GaAs, InP und GaP
3. : Dissoziationsdruckuntersuchungen im System Gallium-Arsen, Dissertation, Bergakademie Freiberg 1990
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