Defects in LEC-grown Indium Phosphide Crystals Doped with Tin
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference34 articles.
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1. Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances;Journal of Crystal Growth;2003-11
2. Microdefects in InP crystals grown by the liquid-encapsulated Czochralski method;Journal of Crystal Growth;1993-11
3. LPE growth and characterization of InP/InGaAsP ridge-waveguide lasers at 1.3 μm-wavelength;Crystal Research and Technology;1990-06
4. On the correlation of lattice defects to HUBER-etch pit morphologies on (001) surface of InP;Crystal Research and Technology;1989-12
5. Pseudomorphic Growth and Nucleation of Misfit Dislocations in the Epitaxial System (001) InP/In1−xGraxAs. I. Pseudomorphic Growth, Tetragonal Distortion, and Lattice Relaxation by Dislocation Nucleation;Physica Status Solidi (a);1989-04-16
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