Affiliation:
1. School of Automation Engineering University of Electronic Science and Technology of China Chengdu 611731 China
2. Department of Electrical & Computer Engineering National University of Singapore Singapore 117576 Singapore
Abstract
As a core functional material in acoustic resonators and filters, the elasticity of aluminum nitride (AlN) piezoelectric thin film and its correlated intrinsic properties deserve priority attention. This paper presents an in‐depth investigation of elastic softening and stiffening effect induced by stress loading in AlN piezoelectric thin film. Based on the Born‐Lande equation, the physical mechanism of such new intrinsic elastic property is revealed and predicted quantitatively for the first time from the perspective of atomic interaction forces. It is found that a maximum 6.7% modulation range of elasticity coefficient can be achieved under ultimate stress loading conditions from (−2.5, −2.5) to (2.5, 2.5) GPa. © 2023 Institute of Electrical Engineer of Japan and Wiley Periodicals LLC.
Funder
Fundamental Research Funds for the Central Universities
National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering