Liquid-phase epitaxy of AlGaAs heterostructures on profiled substrates-Reference-Cited by-同舟云学术

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Liquid-phase epitaxy of AlGaAs heterostructures on profiled substrates

Published:1980 Issue:4 Volume:15 Page:379-385
ISSN:0023-4753
Container-title:Kristall und Technik
language:en
Short-container-title:Krist. Techn.

Author:

Andreyev V. M.,Egorov V. V.,Syrbu A. V.,Trofim V. G.,Yakovlev V. P.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry,Pharmacology (medical),Complementary and alternative medicine,Pharmaceutical Science

Reference14 articles.

1. Liquid phase epitaxy of AlxGa1–xAs-GaAs heterostructures

2. Investigation of a new LPE method of obtaining AlGaAs heterostructures

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application Of III–V Compounds In Solar Cells;Photovoltaic and Photoactive Materials — Properties, Technology and Applications;2002

2. Liquid-phase epitaxy over channelled substrates;Journal of Crystal Growth;1984-12

3. LPE growth effects of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.55P0.45 on structured InP substrates;Journal of Crystal Growth;1983-01

4. Growth effects of In0.53Ga0.47As on InP structured substrates;Electronics Letters;1982

5. Constricted double-heterojunction AlGaAs diode lasers: Structures and electrooptical characteristics;IEEE Journal of Quantum Electronics;1981-12

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