Analysis of epitaxial CdxHg1 −xTe layers using RBS, SIMS and EER-Reference-Cited by-同舟云学术

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Analysis of epitaxial CdxHg1 −xTe layers using RBS, SIMS and EER

Published:1989-11 Issue:11 Volume:14 Page:717-724
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Diskett D. J.,Avery A. J.,Blackmore G.,Irvine S. J. C.,Giess J.,Berlouis L. E. A.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference24 articles.

1. Organometallic growth of II–VI compounds

2. The growth by MOVPE and characterisation of CdxHg1−xTe

3. Slider LPE of Hg1-xCdxTe using mercury pressure controlled growth solutions

4. The growth of highly uniform cadmium mercury telluride by a new MOVPE technique

5. Epitaxial growth of CdxHg1−xTe by photo-MOVPE

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic Spectrometry Update—Atomic Emission Spectrometry;J. Anal. At. Spectrom.;1991

2. Analysis of cadmium mercury telluride and related materials;Journal of Crystal Growth;1990-11

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