Composition of TiN diffusion barriers in contact holes of advanced integrated circuits: A challenge for quantitative Auger spectroscopy-Reference-Cited by-同舟云学术

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Composition of TiN diffusion barriers in contact holes of advanced integrated circuits: A challenge for quantitative Auger spectroscopy

Published:1989-06 Issue:6-7 Volume:14 Page:289-294
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Pamler W.,Kohlhase A.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference33 articles.

1. Diffusion barriers in thin films

2. Interactions in metallization systems for integrated circuits

3. and Int. Electron Devices Meeting IEDM-85, Digest of Technical Papers, pp. 25-27 (1985).

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reducing the aspect ratio of contact holes by in situ low-angle cross sectioning;Journal of Electron Spectroscopy and Related Phenomena;2015-07

2. Auger analysis of etch residues in submicrometer via holes using focused ion beam sample preparation;Surface and Interface Analysis;1995-02

3. Auger depth profiles of TiN/Ti films in submicron contact holes: A comparison of collimated and uncollimated deposition processes;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-05

4. Stoichiometry effects in TiN diffusion barriers;Thin Solid Films;1992-12

5. Quantitative Auger electron spectroscopic analysis of titanium nitrides;Vacuum;1991-01

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