Comparison of beam-induced profile broadening effects of gallium and copper in oxygen-bombarded silicon
Author:
Publisher
Wiley
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference22 articles.
1. Implantation and ion beam mixing in thin film analysis
2. Profile distortion in SIMS
3. Temperature dependence of profile tailing and segregation in SIMS analysis of As in Si and SiO2 with oxygen primary ions
4. Oxygen induced broadening effects studied by RBS and SIMS
5. and in Secondary Ion Mass Spectrometry SIMS V, ed. by and pp. 299-301. Springer, Berlin (1986).
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