Application of AES micro-analysis to interface characterization in TiSi diffusion couples: 2—Influence of oxygen-Reference-Cited by-同舟云学术

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Application of AES micro-analysis to interface characterization in TiSi diffusion couples: 2—Influence of oxygen

Published:1988-11 Issue:2-3 Volume:13 Page:130-134
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Quenisset C.,Naslain R.,Demoncy P.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference20 articles.

1. Refractory silicides for integrated circuits

2. Development of the Self-Aligned Titanium Silicide Process for VLSI Applications

3. MO/Ti bilayer metallization for a self‐aligned TiSi2 process

4. and Semiconduct. Int. 181 (1985).

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1. Fabrication and structural characterization of TiO nanoparticle soft-landed on substrate by the magnetron sputtering-gas aggregation method;The European Physical Journal D;2005-07

2. Oxygen-ion-assisted deposition of TiO films;Vacuum;2000-08

3. Dealloying Kinetics of Cu1 − x Ti x on SiO2 Using In Situ X‐Ray Diffraction;Journal of The Electrochemical Society;1995-04-01

4. Deposition of Conductive Titanium Sub-Oxide Films by Reactive Ion-Beam Sputtering;MRS Proceedings;1994

5. Ion-selective electrodes;Analytical Chemistry;1990-06-15

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