Affiliation:
1. Department of Chemical and Materials Engineering National Yunlin University of Science and Technology Yunlin 64002 Taiwan
2. Department of Electrical engineering State Polytechnic of Kupang East Nusa Tenggara 85361 Indonesia
Abstract
AbstractThe feasibility of near‐infrared (NIR) absorbing material Cs0.33WO3 to transform NIR to photocurrent in a solid‐state device is reported. The electrical properties and energy levels of Cs0.33WO3 and the impedance of the devices are analyzed in detail to realize the photovoltaic transformation mechanism further. Polyvinylpyrrolidone incorporation into the Cs0.33WO3 layer can effectively suppress electron‐hole recombination and raise the photocurrent density from 2.5 to 22.2
(a 788% increase), which is much larger than that in a liquid‐electrolyte device. Poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) used as a hole transport material can lead to a lower energy barrier and faster response than NiOX, but resulting in worse device stability.
Subject
Materials Chemistry,Energy Engineering and Power Technology,Renewable Energy, Sustainability and the Environment,Biomaterials
Cited by
2 articles.
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