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A low-power SiGe BiCMOS series-tuned divide-by-3 injection locked oscillators

  • Published:2009-06-19 Issue:9 Volume:51 Page:2239-2242
  • ISSN:0895-2477
  • Container-title:Microwave and Optical Technology Letters
  • language:en
  • Short-container-title:Microw. Opt. Technol. Lett.

Author:

Jang Sheng-Lyang,Yang Ren-Kai,Liu Cheng-Chen,Hsue Ching-Wen

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. A wide locking range and low voltage CMOS direct injection-locked frequency divider;Chuang;IEEE Microwave Wireless Compon Lett,2006

2. A CMOS direct injection-locked oscillator topology as high-frequency low-power frequency divider;Tiebout;IEEE J Solid State Circ,2004

3. A 16-to-18GHz 0.18μm epi-CMOS divide-by-3 injection-locked frequency divider;Wu;ISSCC, San Francisco, CA,2006

4. W-band divide-by-3 frequency divider using 0.1 μm InAlAs/InGaAs metamorphic HEMT technology;Jeong;Electron Lett,2005

5. A low power CMOS divide-by-3 LC-tank injection locked frequency divider;Jang;Microwave Opt Technol Lett,2008

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A wide-locking ÷3 BiCMOS injection-locked frequency divider using internal feedback;Microwave and Optical Technology Letters;2013-12-23

2. A parallel-injection injection locked frequency divider in 0.35-μm SiGe HBT process;Microwave and Optical Technology Letters;2011-12-15

3. A SiGe injection-locked-oscillator using HBT injector operated in saturation region;Microwave and Optical Technology Letters;2011-02-22

4. Wide-band ÷3 injection locked frequency divider in 0.35 μm SiGe BiCMOS;Microwave and Optical Technology Letters;2011-01-19

5. A dual-band divide-by-2 injection locked frequency divider in 0.35-μm SiGe BiCMOS;Microwave and Optical Technology Letters;2010-09-22
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