Amorphous p‐Type Conducting Zn– x Ir Oxide ( x > 0.13) Thin Films Deposited by Reactive Magnetron Cosputtering
Author:
Affiliation:
1. Institute of Solid State Physics University of Latvia Kengaraga 8 Riga LV-1063 Latvia
2. Department of Smart Hardware Research Institutes of Sweden Box 1070 Stockholm 164 25 Sweden
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202100374
Reference33 articles.
1. P-type electrical conduction in transparent thin films of CuAlO2
2. Latest directions in p-type transparent conductor design
3. Recent Developments in p-Type Oxide Semiconductor Materials and Devices
4. Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO
5. ZnIr2O4, a p-type transparent oxide semiconductor in the class of spinel zinc-d6-transition metal oxide
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