Affiliation:
1. Department of Electronics and Electrical Engineering Dongguk University‐Seoul 30 Pildong‐ro 1‐gil Jung‐gu Seoul 04620 Korea
2. Department of Electrical Engineering Chonbuk National University 567 Baekje‐daero Deokjin‐gu Jeonju‐si 54896 Jeollabuk do Korea
3. Humanitas College and Department of Physics Kyung Hee University Yongin 17104 Korea
4. Korea Photonics Technology Institute 208 Cheomdangwagi‐ro Buk‐gu Gwangju Korea
Abstract
MoS2, a 2D transition metal dichalcogenide, has received significant attention for next‐generation electrical and optical devices due to its excellent optical and electrical properties, including high electron mobility and a direct bandgap. Beyond conventional 2D‐based device architectures, the exploration of 2D and bulk (3D) heterojunctions has revealed unique electronic performance in 2D and structural stability in 3D. III–V semiconductors such as InGaxAs1−x have a direct bandgap with a broad tunability range (i.e., 0.35–1.4 eV), offering an ideal choice for optoelectronic applications. Herein, a type‐II staggered heterojunction between p‐type MoS2 and n‐type In0.53Ga0.47As is demonstrated. The p‐MoS2/n‐In0.53Ga0.47As heterostructure shows the photoresponsivity in the wavelength range from 400 to 1700 nm with typical rectifying diode characteristics. These results highligh the potential of the p‐MoS2/n‐In0.53Ga0.47As heterostructure for high‐performance devices, opening avenues for diverse applications.
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials