Self‐Consistent Modeling of Nucleation and Growth of 2D Islands on the Top Facet of Self‐Catalyzed GaAs Nanowires-Reference-Cited by-同舟云学术

Self‐Consistent Modeling of Nucleation and Growth of 2D Islands on the Top Facet of Self‐Catalyzed GaAs Nanowires

Published:2021-03-11 Issue:6 Volume:258 Page:2000604
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Koryakin Alexander A.¹²^ORCID,Kukushkin Sergey A.¹³^ORCID

Affiliation:

1. Faculty of Physics St. Petersburg State University St. Petersburg 199034 Russia

2. Laboratory of Epitaxial Nanotechnologies Alferov St. Petersburg Academic University St. Petersburg 194021 Russia

3. Laboratory of Structural and Phase Transformations in Condensed Media Institute of Problems of Mechanical Engineering RAS St. Petersburg 199178 Russia

Funder

Russian Science Foundation

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202000604

Reference31 articles.

1. Synthesis and Applications of III–V Nanowires

2. Arsenic Pathways in Self-Catalyzed Growth of GaAs Nanowires

3. Predictive modeling of self-catalyzed III-V nanowire growth

4. A binary database for III–V compound semiconductor systems

5. Role of sidewall diffusion in GaAs nanowire growth: A first-principles study

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