Electronic, Optical, and Magnetic Properties of Doped Triangular MoS <sub>2</sub> Quantum Dots: A Density Functional Theory Approach-Reference-Cited by-同舟云学术

Electronic, Optical, and Magnetic Properties of Doped Triangular MoS ₂ Quantum Dots: A Density Functional Theory Approach

Published:2022-02-12 Issue:4 Volume:259 Page:2100509
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Tiutiunnyk Anton¹²³,Morales Alvaro L.⁴,Bertel Ramon⁵⁶,Restrepo Ricardo L.⁷,Nava-Maldonado Flavio M.⁸,Martínez-Orozco Juan C.⁹,Laroze David¹,Duque Carlos A.⁴,Correa Julian D.⁶,Mora-Ramos Miguel Eduardo¹⁰^ORCID

Affiliation:

1. Instituto de Alta Investigación Universidad de Tarapacá Casilla 7D Arica Chile

2. Centro de Investigación de Estudios Avanzados del Maule (CIEAM) Universidad Católica del Maule 3480112 Talca Chile

3. Centro de Nanociencia y Nanotecnología Avda. Libertador Bernardo O'Higgins 3363 Estación Central Chile

4. Grupo de Materia Condensada-UdeA Instituto de Física Facultad de Ciencias Exactas y Naturales Universidad de Antioquia UdeA Calle 70 No. 52-21 Medellín Colombia

5. Centro de Investigaciones Universidad de la Guajira Riohacha Colombia

6. Facultad de Ciencias Básicas Universidad de Medellín Medellín Colombia

7. Universidad EIA Envigado CP 055428 Colombia

8. Unidad Académica de Ciencias Químicas Universidad Autónoma de Zacatecas Campus Universitario UAZ Siglo XXl Carretera Zacatecas-Guadalajara Km 6 Ejido La Escondida Zac. Zacatecas CP 98160 México

9. Unidad Académica de Física Universidad Autónoma de Zacatecas Calzada Solidaridad esquina con Paseo La Bufa S/N Zac. Zacatecas CP 98060 México

10. Centro de Investigación en Ciencias-IICBA Universidad Autónoma del Estado de Morelos Av. Universidad 1001 Cuernavaca Morelos CP 62209 México

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202100509

Reference61 articles.

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4. High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

5. High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

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