The Splitting of Electron States in Ge/Si Heterostructure with Germanium Quantum Dots-Reference-Cited by-同舟云学术

The Splitting of Electron States in Ge/Si Heterostructure with Germanium Quantum Dots

Published:2020-07-14 Issue:9 Volume:257 Page:2000221
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Pokutnyi Sergey I.¹^ORCID

Affiliation:

1. Department of Theoretical Physics Chuiko Institute of Surface Chemistry of National Academy of Sciences of Ukraine 17 General Naumov Str. Kyiv 03164 Ukraine

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202000221

Reference22 articles.

1. Spatial separation of electrons in Ge/Si(001) heterostructures with quantum dots

2. Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation

3. Localization of electrons in dome-shaped GeSi/Si islands

4. Strain-induced localization of electrons in layers of the second-type Ge/Si quantum dots

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1. Theory of spatially indirect excitons in nanosystems containing double semiconductors quantum dots;Surface;2023-12-30

2. The radiation intensity of optical transitions in the germanium/silicon nanosystems;Molecular Crystals and Liquid Crystals;2023-05-19

3. Electron Tunneling in Heterostructures with Germanium Quantum Dots;Springer Proceedings in Physics;2023

4. Spatially indirect excitons and exciton quasimolecules in nanosystems with double quantum dots;Molecular Crystals and Liquid Crystals;2022-08-10