An In Situ‐Fabricated All‐Inorganic Perovskite/MoO3 Heterojunction by Chemical Vapor Deposition and Its Photoresponse Properties

Abstract

All‐inorganic lead halide perovskite CsPbBr3 has received a lot of attention in the field of optoelectronic devices due to its high absorption coefficient and photoelectric conversion efficiency. Using a heterojunction as the core of a photodetector (PD) to transform the optical signal into an electrical signal compensates for the deficiencies of using a single material. Here, a simple and efficient chemical vapor deposition (CVD) method is used to fabricate a CsPbBr3/MoO3/ITO heterojunction PD with superior photoresponse properties, including photoresponsivity of 37.209 A W−1 and detectivity of 1.64 × 1012 Jones at bias voltage of 3 V. Compared with pure CsPbBr3 perovskite, the responsivity of the PD is 3.54 times as great. As a photosensitive layer, CsPbBr3 absorbs photons and releases electrons due to its high optical absorption coefficient. The introduction of MoO3 plays a role in promoting the separation and transport of photogenerated carriers of the heterojunction structure and improves device performance. This study provides groundwork facilitating the use of CVD for in situ growth of high‐performance all‐inorganic perovskite heterostructures to realize the prospect of large‐scale production of perovskite PDs.