Affiliation:
1. FabNS BH‐Tec, Parque Tecnológico de Belo Horizonte Belo Horizonte MG 31.310-260 Brazil
2. Divisão de Metrologia de Materiais Inmetro Duque de Caxias RJ 25250-020 Brazil
3. Departamento de Física UFMG Belo Horizonte MG 31270-901 Brazil
Abstract
Material´s patterned modifications are crucial for device fabrication, and their evolution from the micro‐ to the nanoscale depends on the development of modification and characterization techniques. Herein, a graphene sample cut by a He‐ion beam is characterized using Raman spectroscopy. What can be obtained from micro‐Raman spectroscopy as compared to nano‐Raman spectroscopy is analyzed, the latter implemented in the tip‐enhanced Raman spectroscopy (TERS) configuration. Local sputtering, inhomogeneous distributions of defects, strain and doping are only observed in the higher‐resolution nano‐Raman‐mode characterization.
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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