Investigation on the Stability, Elastic Properties, and Electronic Structure of Mg 2 Si Doped with Different Concentrations of Cu: A First‐Principles Calculation
Author:
Affiliation:
1. School of Material Science and Engineering Shenyang University of Technology Shenyang 110870 Liaoning P. R. China
2. School of Mechanical Engineering Weifang University of Science and Technology Shouguang 262700 Shandong P. R. China
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202000597
Reference38 articles.
1. Energetics of alkaline-earth metal silicides calculated using a first-principle pseudopotential method
2. Electronic structure of generic semiconductors: Antifluorite silicide and III-V compounds
3. Thermoelectric properties of Sb-doped Mg2Si semiconductors
4. Microstructural evolution and high temperature mechanical properties of cast Al–15Mg2Si–xGd in situ composites
5. The Effect of Si and Extrusion Process on the Microstructure and Tensile Properties of Mg-Mg2Si Composite
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3. First‐Principles Study on Electronic and Elastic Properties of Co, Ni, Cu, and Mo‐Doped Β‐Si3N4;Advanced Theory and Simulations;2023-11-15
4. The Microstructure and Mechanical Stability of Sc-Doped Mg2Si/Al Composite: Experiments and First Principles Calculation;International Journal of Metalcasting;2023-02-14
5. Magnetic Properties of 3 d Transition Metal Atoms (V, Cr, Mn, Fe, Co, or Ni)‐Doped Mg 2 Si;physica status solidi (b);2022-04-28
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