Depth Distribution of Defects in SiC PiN Diodes Formed Using Ion Implantation or Epitaxial Growth-Reference-Cited by-同舟云学术

Depth Distribution of Defects in SiC PiN Diodes Formed Using Ion Implantation or Epitaxial Growth

Published:2021-10-27 Issue: Volume: Page:2100419
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Fukaya Shuhei¹,Yonezawa Yoshiyuki²,Kato Tomohisa²,Kato Masashi¹³^ORCID

Affiliation:

1. Department of Electrical and Mechanical Engineering Nagoya Institute of Technology Gokiso, Showa Nagoya 466-8555 Japan

2. Advanced Power Electronics Research Center National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba West 5E 16-1 Onogawa Tsukuba Ibaraki 305-8569 Japan

3. Frontier Research Institute of Materials Science Nagoya Institute of Technology Gokiso, Showa Nagoya 466-8555 Japan

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202100419

Reference39 articles.

1. Status and Prospects of SiC Power Devices

2. 4H-SiC n-Channel Insulated Gate Bipolar Transistors on (0001) and (000-1) Oriented Free-Standing n−Substrates

3. 21-kV SiC BJTs With Space-Modulated Junction Termination Extension

4. Current status and perspectives of ultrahigh-voltage SiC power devices

5. Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices

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1. Effects of ion implantation process on defect distribution in SiC SJ-MOSFET;Japanese Journal of Applied Physics;2023-01-01