P‐166: Tuning the Refractive Index of Silicon‐Oxynitride Films for Light‐Extraction Enhancement of OLED Devices-Reference-Cited by-同舟云学术

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P‐166: Tuning the Refractive Index of Silicon‐Oxynitride Films for Light‐Extraction Enhancement of OLED Devices

Published:2020-08 Issue:1 Volume:51 Page:2013-2016
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Miao Yang¹²,Yang Zhongguo²,Li Jinchuan²,Qian Jiajia²,Chu Jinxing²,Wang Min²,Du Yanying²,Cao Weiran²,Zhou Hang¹

Affiliation:

1. Peking University Shenzhen Graduate School Peking University Shenzhen China

2. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Shenzhen China

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.14310

Reference12 articles.

1. High-efficiency red phosphorescent electroluminescence devices based on mixed p / n host matrices

2. A host material with a small singlet–triplet exchange energy for phosphorescent organic light-emitting diodes: Guest, host, and exciplex emission

3. Highly efficient phosphorescent organic light-emitting diodes using a homoleptic iridium(III) complex as a sky-blue dopant

4. Improved light out-coupling in organic light emitting diodes employing ordered microlens arrays

5. Light extraction from organic light-emitting diodes for lighting applications by sand-blasting substrates

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