1.2: Invited Paper: High Performance Oxide TFTs Doped with Lanthanum Rare Earth
Author:
Affiliation:
1. Guangzhou New Vision Opto-Electronic Technology Co., Ltd Guangzhou China
2. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology Guangzhou China
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.14350
Reference6 articles.
1. Direct Observation of Hole Current in Amorphous Oxide Semiconductors under Illumination. Electrochem;Chung Y. J.;Solid-State Lett.,2011
2. The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors
3. Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer
4. O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors;Ryu B.;Appl. Phys. Lett.,2010
5. Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors;Chowdhury M. D. H.;Appl. Phys. Lett.,2010
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